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G110N06K

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06KA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06T

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G110N06TA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06M

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06S

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT110N06SH

N-ChannelEnhancementModePowerMOSFET

Description TheGT110N06SHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HY110N06T

55V/110AN-ChannelEnhancementModeMOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features ?LowOn-StateResistance ?ExcellentGateChargexRDS(ON)Product(FOM) ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl ?I

HY

HY ELECTRONIC CORP.

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