描述 Description

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

特性 Features

·18 dB Small Signal Gain
·30 W Typical PSAT
·Operation up to 50 V
·High Breakdown Voltage
·High Temperature Operation

應(yīng)用 Application

·Test Instrumentation
·EMC Amplifier Drivers
·Ultra Broadband Amplifiers