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IPM-L634

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IRC634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRC634PRF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli

IRF

International Rectifier

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF634

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent-ID=8.1A@TC=25°C ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-DCconv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CHM634PAPT

  • 制造商：

    CHENMKO

  • 制造商全稱(chēng)：

    Chenmko Enterprise Co. Ltd.

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CHENMKO
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
Luminus
20000
詢(xún)價(jià)
24+
N/A
79000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
LUMINUS
20+
光電元件
982
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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NK/南科功率
2025+
TO-252
986966
國(guó)產(chǎn)
 詢(xún)價(jià)
更多CHM634PAPT供應(yīng)商 更新時(shí)間2025-7-28 16:19:00

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