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CEB6056

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6056

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6056

N Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6056L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6056L

N Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

技術(shù)參數(shù)

  • BVDSS(V)：

    60

  • Rds(on)mΩ@10V：

    6.2

  • ID(A)：

    100

  • Qg(nC)@10V(typ)：

    77

  • RθJC(℃/W)：

    1.5

  • Pd(W)：

    100

  • Configuration：

    Single

  • Polarity：

    N

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價
C
23+
TO-263S
6000
原裝正品，支持實(shí)單
 詢價
CET
1932+
TO-263
512
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
CET
23+
TO-263
547
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VB
25+
T0-263
1040
原裝正品,假一罰十!
 詢價
VIATELECOM
24+
BGA
6618
公司現(xiàn)貨庫存,支持實(shí)單
 詢價
CET/華瑞
24+
TO-263
60000
詢價
CET
21+
TO-263
547
原裝現(xiàn)貨假一賠十
 詢價
NK/南科功率
2025+
TO-263
986966
國產(chǎn)
 詢價
更多CEB6056供應(yīng)商 更新時間2025-7-29 10:06:00

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