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CEB6056L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6056L

N Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

技術(shù)參數(shù)

  • BVDSS(V)：

    60

  • Rds(on)mΩ@10V：

    6.2

  • Rds(on)mΩ@4.5V：

    9

  • ID(A)：

    100

  • Qg(nC)@4.5V(typ)：

    48

  • RθJC(℃/W)：

    1.5

  • Pd(W)：

    100

  • Configuration：

    Single

  • Polarity：

    N

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NK/南科功率
2025+
TO-263
986966
國產(chǎn)
 詢價(jià)
CET/華瑞
2511
TO-263
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
 詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VBSEMI/臺(tái)灣微碧
24+
T0-263
60000
詢價(jià)
CET/華瑞
23+
TO265
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
TO265
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
24+
TO-263
1335
詢價(jià)
CET
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET/華瑞
23+
TO-263
13550
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多CEB6056L供應(yīng)商 更新時(shí)間2025-7-27 14:01:00

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