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FDB603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FG603

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FGM603

SelectionGuide

SANKENIGBT FGT313,FGT312,FGT412,FGT612,FGM622S,FGM603,FGM623S,MGD623N,MGD623S

SankenSanken electric

三墾三墾電氣株式會社

FR603

FASTRECOVERYRECTIFIER

ReverseVoltage-50to1000Volts ForwardCurrent-6.0Amperes Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Fastswitchingforhighefficiency ●Constructionutilizesvoid-freemoldedplastictechnique ●6.0ampereoperationatTA=75withn

Good-Ark

GOOD-ARK Electronics

FR603

6.0AMPFASTRECOVERYRECTIFIERS

Features ?Axialleadtypedevicesforthroughholedesign. ?Highcurrentcapability. ?Fastswitchingforhighefficiency. ?Highsurgecapability. ?Siliconrubbercoatingchipjunction. ?Lead-freepartsmeetRoHSrequirments. ?Suffix-HindicatesHalogen-freeparts,ex.FR601-H.

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FR603

6.0AMPFASTRECOVERYRECTIFIERS

VOLTAGERANGE50TO1000VoltsCURRENT6.0Amperes FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

BYTES

Bytes

詳細參數(shù)

  • 型號：

    C603D

  • 制造商：

    JOHANSON

  • 制造商全稱：

    Johanson Technology Inc.

  • 功能描述：

    RF Ceramic Component Proto-Typing Kits

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