FDP603AL中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
FDP603AL規(guī)格書詳情
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
特性 Features
■ 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ High density cell design for extremely low RDS(ON).
■ 175°C maximum junction temperature rating.
產品屬性
- 型號：
FDP603AL
- 功能描述：
MOSFET DISC BY MFG 2/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAI |
24+ |
246 |
詢價 | ||||
FAIRCHILD |
25+23+ |
TO220 |
12391 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
FSC |
17+ |
TO-220 |
6200 |
詢價 | |||
FAIRCHI |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
ON |
20+ |
SMD |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
24027 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 | ||
Fairchi |
2016+ |
TO-220 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
FAIRCHILD |
23+ |
TO-220 |
65480 |
詢價 | |||
ON/安森美 |
23+ |
TO-220 |
30000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
