描述 Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

特性 Features

? Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
? Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
? High power gain
? High efficiency
? Designed for broadband operation (400 MHz to 1000 MHz)
? Internal input matching for high gain and optimum broadband operation
? Excellent reliability
? Easy power control
? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

應(yīng)用 Application

? Communication transmitter applications
? Industrial applications

簡(jiǎn)介

BLF10H6600PS屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的BLF10H6600PS晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。