描述 Description

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

特性 Features

? High efficiency
? Easy power control
? Excellent ruggedness
? Integrated ESD protection
? ?Designed for broadband operation (900 MHz to 930 MHz)
? Internally input matched
? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

應(yīng)用 Application

? Industrial applications in the 915 MHz ISM band

簡介

BLF0910H9LS600屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的BLF0910H9LS600晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。