描述 Description

1200 W LDMOS power transistor for avionics applications in the frequency range of 960 MHz to 1215 MHz.

特性 Features

? High efficiency
? Excellent ruggedness
? Designed for avionics band operation
? Excellent thermal stability
? Easy power control
? Integrated dual sided ESD protection enables excellent off-state isolation
? High flexibility with respect to pulse formats
? Internally matched for ease of use
? For RoHS compliance see the product details on the Ampleon website

應(yīng)用 Application

? Avionics applications in the frequency range of 960 MHz to 1215 MHz

簡介

BLA9H0912L-1200P屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的BLA9H0912L-1200P晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。