描述 Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to1090 MHz.

特性 Features

Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

應用 Application

Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

簡介

BLA8G1011LS-300屬于分立半導體產品的晶體管-FETMOSFET-射頻。由制造生產的BLA8G1011LS-300晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。