描述 Description

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.

特性 Features

? Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz
? Low forward resistance RF = 2.1 ? (typical) at forward current IF = 5 mA and frequency f = 100 MHz
? Charge carrier lifetimeτ = 75 ns (typical)
? Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
? Pb-free, RoHS compliant and halogen-free

優(yōu)勢:

應用 Application

Optimized for low bias current RF and high-speed interface switches in:
? Wireless communications
? High speed data networks