描述 Description

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and very low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.

特性 Features

? Low capacitance C = 0.31 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
? Very low forward resistance RF = 1.9 ? (typical) at forward current IF = 5 mA and frequency f = 100 MHz
? Charge carrier lifetime τ = 75 ns (typical)
? Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
? Pb-free, RoHS compliant and halogen-free

優(yōu)勢(shì):

應(yīng)用 Application

Optimized for low bias current RF and high-speed interface switches in:
? Wireless communications
? High speed data networks