描述 Description

Please note: this product is being discontinued and is not recommended for new designs.

The AWB7229 is a fully matched, Multi-Chip-Module(MCM) designed for picocell, femtocell, and customerpremises equipment (CPE) applications. Consisting oftwo parallel path high linearity, high efficiency poweramplifiers, the device meets the extremely demandingneeds of small cell infrastructure architectures.Designed for LTE, WCDMA and HSDPA air interfacesoperating in the 925 MHz to 960 MHz bands, theAWB7229 delivers up to +27 dBm of LTE (E-TM1.1)power through an external 90-degree hybrid coupler,with an ACPR of -47 dBc. The device operates froma convenient +4.5 V supply and provides 29 dB ofRF gain. The AWB7229 is manufactured using anadvanced InGaP HBT MMIC technology offeringstate-of-the-art reliability, temperature stability, andruggedness. Its 7 mm x 7 mm x 1.3 mm surfacemount package incorporates RF matching networksoptimized for output power, efficiency, and linearity ina 50 Ω system.

特性 Features

? InGaP HBT Technology
? -47 dBc ACPR @ ±10 MHz, +27 dBm
? 29 dB Gain
? High Efficiency
? Low Transistor Junction Temperature
? Matched for a 50 Ω System
? Low Profile Miniature Surface Mount Package; RoHS Compliant
? Multi-Carrier Capability

簡介

AWB7229屬于RF/IF射頻/中頻RFID的射頻放大器。由制造生產(chǎn)的AWB7229射頻放大器在射頻應用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。