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AAT3110IJS-5.0-T1

Marking：ASXYY；Package：SC70JW-8；MicroPowerTM Regulated Charge Pump

Features ?Step-UpVoltageConverter ?InputVoltageRange: ?AAT3110-5:2.7Vto5V ?AAT3110-4.5:2.7Vto4.5V ?MicroPowerConsumption:13μA ?Regulated5V,4.5V±4Output ?5VOutputCurrent: ?100mAwithVIN≥3.0V ?50mAwithVIN≥2.7V ?4.5VOutputCurrent: ?100mAwithVIN≥3.0

SKYWORKSSkyworks Solutions Inc.

思佳訊美國(guó)思佳訊公司

AIMBG120R010M1

Marking：AS10MM1；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC Trench MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=205AatTC=25°C ?RDS(on)=8.7mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R020M1

Marking：AS20MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=104AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R030M1

Marking：AS30MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=70AatTC=25°C ?RDS(on)=30mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R040M1

Marking：AS40MM1；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC Trench MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R060M1

Marking：AS60MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=38AatTC=25°C ?RDS(on)=60mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R080M1

Marking：AS80MM1；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC Trench MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=30AatTC=25°C ?RDS(on)=80mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R120M1

Marking：AS120MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=22AatTC=25°C ?RDS(on)=117mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R160M1

Marking：AS160MM1；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=17AatTC=25°C ?RDS(on)=160mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AO3423L

Marking：AS***；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3423usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO3423isPb-free(meetsROH

AOSMDAlpha & Omega Semiconductors

萬(wàn)國(guó)半導(dǎo)體美國(guó)萬(wàn)國(guó)半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    AS

  • 制造商：

    TE Connectivity Laird

  • 類(lèi)別：

    RF/IF，射頻/中頻和 RFID > RF 配件

  • 包裝：

    散裝

  • 描述：

    ACCY MOBILE SHOCK SPRING CHROME

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
LAIRD
20+
射頻元件
255
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
23+
QFP
16567
正品:QQ;2987726803
 詢價(jià)
INFINEON/英飛凌
23+
44
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
23+
44
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
24+
116
現(xiàn)貨供應(yīng)
 詢價(jià)
ROHM/羅姆
23+
SOT323
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
AEI
22+
NA
69
加我QQ或微信咨詢更多詳細(xì)信息,
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DALLAS
22+
SOT23-3
30000
只做原裝正品
 詢價(jià)
HP
23+
6000
現(xiàn)貨庫(kù)存
 詢價(jià)
Opto 22
2022+
23
全新原裝 貨期兩周
 詢價(jià)
更多AS供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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