描述 Description

Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

特性 Features

■ Single Bias Supply Operation (6 V)

■ 17 dB Typical Small Signal Gain

■ 24 dBm Typical P1 dB Output Power at 26.5 GHz

■ 100 On-Wafer RF and DC Testing

■ 100 Visual Inspection to MIL-STD MT 2010