描述 Description

Alpha’s three-stage reactively-matched 25–29 GHz GaAs MMIC driver amplifier has typical small signal gain of 17 dB with a typical P1 dB of 16 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 μm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance.

特性 Features

■ Single Bias Supply Operation (6 V)

■ 17 dB Typical Small Signal Gain

■ 16 dBm Typical P1 dB Output Power at 26.5 GHz

■ 0.25 μm Ti/Pd/Au Gates

■ 100 On-Wafer RF and DC Testing

■ 100 Visual Inspection to MIL-STD-883 MT 2010