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首頁>74HC4852PW-Q100>規(guī)格書詳情

74HC4852PW-Q100中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

74HC4852PW-Q100
廠商型號

74HC4852PW-Q100

功能描述

Dual 4-channel analog multiplexer/demultiplexer with injection-current effect control

文件大小

847.92 Kbytes

頁面數(shù)量

21

生產(chǎn)廠商 Nexperia B.V. All rights reserved
企業(yè)簡稱

NEXPERIA安世

中文名稱

安世半導體(中國)有限公司官網(wǎng)

原廠標識
NEXPERIA
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-3 14:01:00

人工找貨

74HC4852PW-Q100價格和庫存,歡迎聯(lián)系客服免費人工找貨

74HC4852PW-Q100規(guī)格書詳情

General description

The 74HC4852-Q100; 74HCT4852-Q100 are high-speed Si-gate CMOS devices and are specified in compliance with JEDEC standard no. 7A.

The injection-current effect control allows signals at disabled analog input channels to exceed the supply voltage without affecting the signal of the enabled analog channel. This eliminates the need for external diode/resistor networks typically used to keep the analog channel signals within the supply-voltage range.

Features and benefits

■ Automotive product qualification in accordance with AEC-Q100 (Grade 1)

◆ Specified from -40 °C to +85 °C and from -40 °C to +125 °C

■ Injection-current cross coupling < 1 mV/mA

■ Wide supply voltage range from 2.0 V to 6.0 V for 74HC4852-Q100

■ ESD protection:

◆ MIL-STD-883, method 3015 exceeds 2000 V

◆ HBM JESD22-A114F exceeds 2000 V

◆ MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 Ω)

■ Latch-up performance exceeds 100 mA per JESD 78 Class II level A

■ Low ON-state resistance:

◆ 400 Ω (typical) at VCC = 2.0 V

◆ 215 Ω (typical) at VCC = 3.0 V

◆ 120 Ω (typical) at VCC = 3.3 V

◆ 76 Ω (typical) at VCC = 4.5 V

◆ 59 Ω (typical) at VCC = 6.0 V

Applications

■ Analog multiplexing and demultiplexing

■ Digital multiplexing and demultiplexing

■ Signal gating

■ Automotive application

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