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74HC4852D-Q100中文資料安世數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
74HC4852D-Q100 |
功能描述 | Dual 4-channel analog multiplexer/demultiplexer with injection-current effect control |
文件大小 |
847.92 Kbytes |
頁(yè)面數(shù)量 |
21 頁(yè) |
生產(chǎn)廠商 | NEXPERIA Nexperia B.V. All rights reserved |
中文名稱 | 安世 安世半導(dǎo)體(中國(guó))有限公司 |
網(wǎng)址 | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-6 16:20:00 |
人工找貨 | 74HC4852D-Q100價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
74HC4852D-Q100規(guī)格書詳情
General description
The 74HC4852-Q100; 74HCT4852-Q100 are high-speed Si-gate CMOS devices and are specified in compliance with JEDEC standard no. 7A.
The injection-current effect control allows signals at disabled analog input channels to exceed the supply voltage without affecting the signal of the enabled analog channel. This eliminates the need for external diode/resistor networks typically used to keep the analog channel signals within the supply-voltage range.
Features and benefits
■ Automotive product qualification in accordance with AEC-Q100 (Grade 1)
◆ Specified from -40 °C to +85 °C and from -40 °C to +125 °C
■ Injection-current cross coupling < 1 mV/mA
■ Wide supply voltage range from 2.0 V to 6.0 V for 74HC4852-Q100
■ ESD protection:
◆ MIL-STD-883, method 3015 exceeds 2000 V
◆ HBM JESD22-A114F exceeds 2000 V
◆ MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 Ω)
■ Latch-up performance exceeds 100 mA per JESD 78 Class II level A
■ Low ON-state resistance:
◆ 400 Ω (typical) at VCC = 2.0 V
◆ 215 Ω (typical) at VCC = 3.0 V
◆ 120 Ω (typical) at VCC = 3.3 V
◆ 76 Ω (typical) at VCC = 4.5 V
◆ 59 Ω (typical) at VCC = 6.0 V
Applications
■ Analog multiplexing and demultiplexing
■ Digital multiplexing and demultiplexing
■ Signal gating
■ Automotive application
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Nexperia/安世 |
22+ |
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詢價(jià) | ||
NEXPERIA/安世 |
2407+ |
IC |
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恩XP |
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NEXPERIA |
23+ |
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5000 |
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詢價(jià) | ||
NEXPERIA/安世 |
22+ |
SOT109-1 |
10990 |
原裝正品 |
詢價(jià) | ||
Nexperia(安世) |
24+ |
SO16 |
7350 |
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NEXPERIA/安世 |
2023+ |
8700 |
原裝現(xiàn)貨 |
詢價(jià) | |||
NEXPERIA/安世 |
2447 |
SOT109 |
100500 |
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