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絲?。?strong>6J；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Very fast switching ? Extended temperature range Tj = 175 °C ? Sid

文件：302.07 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? AEC-Q101 qualified

文件：299.19 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲?。?strong>6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA PNP/PNP complement: NPN/PNP complement: NHUMH11 10 10 NHUM

文件：299.22 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：6J；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits ? 100 mA output current capability ? High breakdown voltage ? Built-in resistors ? Simplifies circuit design ? Reduces component count ? Reduces pick and place costs ? Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：303.54 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲?。?strong>6J；Package：SC-62；30 V, 4.2 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required

文件：741 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：6J；Package：PESD2CANFD36LU-Q；ESD protection for in-vehicle networks

1. General description ESD protection device in a small SOT323 Surface-Mounted Device (SMD) plastic package, designed to protect two automotive in-vehicle network bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 2. Features and benefits ? Reverse stand

文件：218.4 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：6J；Package：SOT1220；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Trench MOSFET technology ? Side wetta

文件：302.8 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲?。?strong>6J；Package：UQFN-16L；6A, 23V, 500kHz, ACOT? Synchronous Buck Converter

General Description The RT6220 is a synchronous Buck converter with Advanced Constant On-Time (ACOT? ) mode control, which provides a very fast transient response with no external compensators. The RT6220 operates from 4.5V to 23V input voltage, provides complete protection functions includi

文件：259.149 Kbytes 頁(yè)數(shù)：20 Pages

RichTek

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絲印：6J；Package：SOT-323；Bias Resistor Transistors

文件：453.62 Kbytes 頁(yè)數(shù)：12 Pages

FS

絲?。?strong>6J；Package：SOT-723；Bias Resistor Transistors

文件：549.19 Kbytes 頁(yè)數(shù)：11 Pages

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