最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

6J

型號(hào)：BUK7D36-60E；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Veryfastswitching ?ExtendedtemperaturerangeTj=175°C ?Sid

6J

型號(hào)：NHUMH1；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH111010NHUM

6J

型號(hào)：NHUMH1；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

6J

型號(hào)：NHUMH1-Q；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

6J

型號(hào)：PBSS4032PX；Package：SC-62；30 V, 4.2 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *Smallerrequired

6J

型號(hào)：PESD2CANFD36LU-Q；Package：PESD2CANFD36LU-Q；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323Surface-MountedDevice(SMD)plasticpackage, designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits ?Reversestand

6J

型號(hào)：PMPB12EP；Package：SOT1220；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallandleadlessDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?TrenchMOSFETtechnology ?Sidewetta

6J

型號(hào)：RT6220AGQUF；Package：UQFN-16L；6A, 23V, 500kHz, ACOT? Synchronous Buck Converter

GeneralDescription TheRT6220isasynchronousBuckconverterwith AdvancedConstantOn-Time(ACOT?)modecontrol,which providesaveryfasttransientresponsewithnoexternal compensators.TheRT6220operatesfrom4.5Vto23V inputvoltage,providescompleteprotectionfunctions includi

6J

型號(hào)：DTA401；Package：SOT-323；Bias Resistor Transistors

6J

型號(hào)：DTA801；Package：SOT-723；Bias Resistor Transistors