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TCR2EE50

Marking：5N0；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TCR2EF50

Marking：5N0；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

IAUC100N08S5N031

Marking：5N08031；Package：PG-TDSON-8；OptiMOS?-5 Power-Transistor

Features ?N-channel-Enhancementmode ?AECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L011

Marking：5N06L011；Package：PG-TDSON-8-53；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L015

Marking：5N06L015；Package：PG-TDSON-8-43；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5L022

Marking：5N06L022；Package：PG-TDSON-8-34；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5N011

Marking：5N06N011；Package：PG-TDSON-8-53；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5N015

Marking：5N06N015；Package：PG-TDSON-8-43；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5N022

Marking：5N06N022；Package：PG-TDSON-8-34；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUC120N06S5N032

Marking：5N06N032；Package：PG-TDSON-8-34；OptiMOS?-5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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