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5E

型號：74AUP1T50GW；Package：SOT353-1；Low-power buffer with voltage-level translator

1.Generaldescription The74AUP1T50providesthesinglebufferfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T50isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat acc

5E

型號：74AUP1T50GX；Package：SOT1226-3；Low-power buffer with voltage-level translator

1.Generaldescription The74AUP1T50providesthesinglebufferfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T50isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat acc

5E

型號：BC808-16；Package：SOT-23；Small Signal Transistors (PNP)

Features ?PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. ?Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. ?Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. ?Asc

5E

型號：BZX884S-C68；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

5E

型號：BZX884S-C68-Q；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

5E

型號：MM1Z13；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features ?Totalpowerdissipation:max.500mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Toleranceapproximately±5

5E

型號：MM1Z13；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

5E

型號：PBSS304NX；Package：SC-62；60 V, 4.7 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

5E

型號：PDTA115EE；Package：SC-75；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

5E

型號：PDTA115EE；Package：SOT-523；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

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