特性 Features

? Electrically screened to DLA SMD# 5962-14226

? Low input offset voltage. . . . . . . . . . . . . . ±110μV, maximum

? Superb offset temperature coefficient. . .1μV/°C, maximum

? Input bias current . . . . . . . . . . . . . . . . . . . . ±15nA, maximum

? Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum

? Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA

? Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz

? Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V

? Operating temperature range. . . . . . . . . . . .-55°C to +125°C

? Radiation environment

- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . . 86.4MeV?cm2/mg

- SET recovery time . . . . . . . . . . . ≤10μs at 60MeV?cm2/m

- SEL immune (SOI process)

- Total dose HDR (50 to 300rad(Si)/s). . . . . . . . 300krad(Si)

- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . .100krad(Si) *

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.