特性 Features

? Electrically screened to DLA SMD# 5962-13214

? Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer

? <5μs recovery from SEE (LETTH = 86.4MeV?cm2/mg)

? Unity gain stable

? Rail-to-rail input and output

? Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz

? Wide single and dual supply range. . . . . . . . 2.7V to 40V max

? Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 400μV

? Low current consumption (per amplifier) . . . . . . . 1.1mA, typ

? No phase reversal with input overdrive

? Slew rate

- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/μs

? Operating temperature range. . . . . . . . . . . .-55°C to +125°C

? ISL70444SEH radiation acceptance (see TID report)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

? ISL73444SEH radiation acceptance (see TID report)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

? SEE hardness (see SEE report for details)

- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV?cm2/mg

- SEL immune (SOI Process)