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Marking：45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?H6technology withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ? | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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