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包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個(gè) 描述：TRANSISTOR

Renesas Electronics America Inc

Isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

文件：261.12 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

文件：238.77 Kbytes 頁數(shù)：10 Pages

RENESAS

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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES ? Low on-state resistance: RDS(on)1 = 31 m? MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 m? MAX. (VGS = –4.0 V, ID = –18 A) ? Low input capacitance:

文件：54.78 Kbytes 頁數(shù)：4 Pages

NEC

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RENESAS
TO263

RENESAS

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上傳：深圳市正納電子有限公司