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2SJ601(0)-Z-E1-AZ

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：TRANSISTOR

Renesas Electronics America Inc

2SJ601

P-Channel60-V(D-S)MOSFET

FEATURES RDS(ON)14mQ@VGs=-10V(Typ) RDs(ON)16mQ@VGs=-4.5V(Typ) SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability

2SJ601

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601

P-ChannelMOSFETusesadvancedtrenchtechnology

2SJ601

MOSFieldEffectTransistor

MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=31mMAX.(VGS=-10V,ID=-18A) RDS(on)2=46mMAX.(VGS=-4.0V,ID=-18A) LowCiss:Ciss=3300pFTYP. Built-ingateprotectiondiode

2SJ601

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance:

2SJ601-Z

IscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=-10V DESCRIPTION ·Solenoid,motorandlampdriver

2SJ601-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES Lowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=–10V,ID=–18A) RDS(on)2=46mΩMAX.(VGS=–4.0V,ID=–18A) Lowinput

2SJ601-Z

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ601isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES ?Lowon-stateresistance: RDS(on)1=31m?MAX.(VGS=–10V,ID=–18A) RDS(on)2=46m?MAX.(VGS=–4.0V,ID=–18A) ?Lowinputcapacitance: