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2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002E

SmallSignalMOSFET60V,310mA,Single,N??hannel,SOT??3

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

2N7002E

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

2N7002E

N-CHANNELENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ?LowOn-Resistance ?FastSwitchingSpeed ?Low-voltagedrive ?Easilydesigneddrivecircuits ?Pb-FreePackageisavailable. ?Canprotectagainststaticelectricity1KVwhen theproductisinuse. ?AEC-Q101Pass

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

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