最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

2N7002B

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability

2N7002BK

絲?。?a target="_blank" title="Marking" href="/72kc/marking.html">72KC；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V)

2N7002BK

絲?。?a target="_blank" title="Marking" href="/ln/marking.html">LN；Package：TO-236AB；60 V, 350 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr

2N7002BK

絲?。?a target="_blank" title="Marking" href="/7200/marking.html">7200；Package：SOT23；60V N-Channel Mosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

2N7002BK

絲?。?a target="_blank" title="Marking" href="/ln/marking.html">LN；Package：SOT23；60 V, 350 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

2N7002BK_V01

60 V, 350 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

2N7002BKM

絲?。?a target="_blank" title="Marking" href="/z8/marking.html">Z8；Package：SC-101；60 V, 450 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall SOT883(SC-101)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtec

2N7002BKMB

絲印：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 1.2Featuresandbenefits ?Veryfastswitching ?TrenchMOSFETtechnology ?ESDprote

2N7002BKS

絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET

1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnolog

2N7002BKS

絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnolog