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2N7002V

N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.115A RDS(ON)

RECTRON

Rectron Semiconductor

RECTRON

2N7002V-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliabil

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VA

N-Channel Enhancement Mode Field Effect Transistor

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

Fairchild

2N7002VA-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFreeByDesign/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliabil

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VAC

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VAC-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VC

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VC-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODESDiodes Incorporated

美臺半導體

DIODES

2N7002VPT

Dual N-Channel Enhancement MOS FET

VOLTAGE60VoltsCURRENT0.280Ampere FEATURE *Smallsurfacemountingtype.(SOT-563) *HighdensitycelldesignforlowRDS(ON) *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Serv

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

2N7002W

絲印：K7；Package：SOT-323；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?Low-OnRe

DIODESDiodes Incorporated

美臺半導體

DIODES

技術參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    0.115

  • PD Max (W)：

    0.2

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    7500

  • Qg Typ @ VGS = 10 V (nC)：

    1

  • Ciss Typ (pF)：

    20

  • Package Type：

    SOT-23-3

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更多2N7002供應商 更新時間2021-9-16 14:01:00

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