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2N7002T

N-Channel Enhancement Mode Field Effect Transistor

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. ?DC-DCConverters ?Powermanagementfunctions ?Battery

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002T_09

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes3and4)

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002-T1-E3

N-Channel 60-V (D-S) MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002T-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes3and4)

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002TB

絲?。?a target="_blank" title="Marking" href="/72/marking.html">72；Package：SOT-523；60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?RDS(ON),VGS@10V,IDS@500mA=5? ?RDS(ON),VGS@4.5V,IDS@50mA=7.5? ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignForUltraLowOn-Resistance ?SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Relays,Displays,Lamps,Solenoids,Memories,

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

2N7002T-C

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ●HighDensityCellDesignforLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable ●HighSaturationCurrentCapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SECELECTRONICS

SEC Electronics Inc.

2N7002TE

N-Channel MOSFET

■Features ●VDS(V)=60V ●ID=0.29A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002TG-AN3-R

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

UTCUnisonic Technologies

友順友順科技股份有限公司

2N7002T-HF

MOSFET

Features -HighdensitycelldesignforlowRDS(ON) -Voltagecontrolledsmallsignalswitch -Ruggedandreliable -Highsaturationcurrentcapability

COMCHIPComchip Technology

典琦典琦科技股份有限公司

技術(shù)參數(shù)

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    ±20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    0.115

  • PD Max (W)：

    0.2

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    7500

  • Qg Typ @ VGS = 10 V (nC)：

    1

  • Ciss Typ (pF)：

    20

  • Package Type：

    SOT-23-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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SOT23
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340
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更多2N7002供應(yīng)商 更新時(shí)間2021-9-16 14:01:00

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