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2N7000A

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; ·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity.;

INTERFACE AND SWITCHING APPLICATION.\nFEATURES\n·High density cell design for low RDS(ON).\n·Voltage controolled small signal switch.\n·Rugged and reliable.\n·High saturation current capablity.

2N7000A

FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontroolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity.

2N7000A_15

INTERFACE AND SWITCHING APPLICATION.

2N7000BU

AdvancedSmallSignalMOSFET

BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●FastSwitchingTimes ●ImprovedInductiveRuggedness ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability

2N7000BU

AdvancedSmall-SignalMOSFET

2N7000CSM

N??HANNELENHANCEMENTMODEMOSTRANSISTOR

2N7000CSM

N.CHANNELENHANCEMENTMODEMOSTRANSISTOR

2N7000G

SmallSignalMOSFET200mAmps,60VoltsN??hannelTO??2200mAMPS60VOLTS

2N7000G

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

2N7000G

SmallSignalMOSFET200mAmps,60Volts

SmallSignalMOSFET200mAmps,60Volts N?ChannelTO?92 Features ?Pb?FreePackagesareAvailable*