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型號(hào)：BAS116VY；Package：TSSOP6；Low-leakage triple switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low leakage current: max. 5 nA ? Switching time: typical 0.8 μs ? Continuous reverse voltage: maxim

文件：203.88 Kbytes 頁(yè)數(shù)：8 Pages

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型號(hào)：BAS116VY-Q；Package：TSSOP6；Low-leakage triple switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated triple diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low leakage current: max. 5 nA ? Switching time: typical 0.8 μs ? Continuous reverse voltage: maxim

文件：203.46 Kbytes 頁(yè)數(shù)：8 Pages

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型號(hào)：BC806-16W；Package：SC-70；80 V, 500 mA PNP general-purpose transistors

Features and benefits ? High current ? High voltage ? Two current gain selections ? AEC-Q101 qualified

文件：247.5 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

型號(hào)：BZX884S-B5V1；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 頁(yè)數(shù)：14 Pages

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型號(hào)：BZX884S-B5V1-Q；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits ? Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 頁(yè)數(shù)：14 Pages

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型號(hào)：ESD15V32D-C；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line or power line(Bidirectional) Low clamping voltage Working voltages:3.3V ~ 48V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 18V); IEC61000-4-2 (ESD) ±15kV (air), ±15kV (contact):

文件：895.29 Kbytes 頁(yè)數(shù)：4 Pages

優(yōu)恩半導(dǎo)體

型號(hào)：ESD15V32DS-C；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 255~410 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line or power line Low Clamping Voltage Working Voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2(ESD) ±30kV

文件：2.21656 Mbytes 頁(yè)數(shù)：4 Pages

優(yōu)恩半導(dǎo)體

型號(hào)：MM3Z18；Silicon Planar Zener Diodes

FEATURES ? Total power dissipation: Max. 200mW. ? Wide zener reverse voltage range 2.0V to 75V. ? Small plastic package suitable for surface mounted design. ? Tolerance approximately±5

文件：537.22 Kbytes 頁(yè)數(shù)：3 Pages

佑風(fēng)微電子

型號(hào)：PBSS4230PANP；Package：DFN2020-6；30 V, 2 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits ? Very low collect

文件：854.83 Kbytes 頁(yè)數(shù)：21 Pages

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型號(hào)：PMEG45T20EXD；Package：CFP2-HP；45 V, 2 A Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low forward voltage ? Low Qrr and low IRM ? Low leakage curre

文件：254.52 Kbytes 頁(yè)數(shù)：13 Pages

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