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型號：3.0SMC22；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 頁數(shù)：5 Pages

YFWDIODE

佑風(fēng)微電子

型號：B220W-S；Package：SOD-123S；2A Surface Mount Schottky Barrier Rectifiers

Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-fre

文件：91.46 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

型號：B220W-ST；Package：SOD-123ST；2A Surface Mount Schottky Barrier Rectifiers

Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-fre

文件：104.02 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

型號：BZX384-A4V7；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號：BZX384-A4V7；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to

文件：302.42 Kbytes 頁數(shù)：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號：BZX384-A4V7-Q；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

型號：DMN10H220LFDF-13；Package：U-DFN2020-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 100 Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requi

文件：472.64 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

型號：DMN10H220LFDF-7；Package：U-DFN2020-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 100 Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requi

文件：472.64 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導(dǎo)體

型號：DTC123E；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 頁數(shù)：9 Pages

ROHM

羅姆

型號：DTC123EE；Package：SOT-523；NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

SOT-523 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor wit

文件：789.18 Kbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子