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3.0SMC22

Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

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B220W-S

Package：SOD-123S；2A Surface Mount Schottky Barrier Rectifiers

Features ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Lowpowerloss,highefficiency. ?Highcurrentcapability,lowforwardvoltagedrop. ?Ultrahigh-speedswitching. ?Siliconepitaxialplanarchip,metalsiliconjunction. ?SuffixGindicatesHalogen-fre

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B220W-ST

Package：SOD-123ST；2A Surface Mount Schottky Barrier Rectifiers

Features ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Lowpowerloss,highefficiency. ?Highcurrentcapability,lowforwardvoltagedrop. ?Ultrahigh-speedswitching. ?Siliconepitaxialplanarchip,metalsiliconjunction. ?SuffixGindicatesHalogen-fre

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BZX384-A4V7

Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

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BZX384-A4V7

Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

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BZX384-A4V7-Q

Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

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DMN10H220LFDF-13

Package：U-DFN2020-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequi

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DMN10H220LFDF-7

Package：U-DFN2020-6；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 100UnclampedInductiveSwitch(UIS)TestinProduction LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequi

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DTC123E

DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

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DTC123EE

Package：SOT-523；NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

SOT-523BiasResistorTransistor NPNSiliconSurfaceMountTransistorwith MonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceand itsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsa singletransistorwit