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1P

型號：PMPB33XN；Package：DFN2020MD-6；30 V single N-channel Trench MOSFET

1P1

型號：3DK2222A；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(MMBT2907A)

1PQ

型號：CAHC1G125QDCKRQ1；Package：SC70；SN74AHC1G125-Q1 Automotive Single Bus Buffer Gate With 3-State Output

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof2-Vto5.5-V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat5

1PQ

型號：CAHC1G125QDCKRQ1；Package：SC70；SN74AHC1G125-Q1 Automotive Single Bus Buffer Gate With 3-State Output

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof2-Vto5.5-V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat5

1PB

型號：CAHCT1G00QDCKRQ1；Package：SC70；SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat

1PB

型號：CAHCT1G00QDCKRQ1；Package：SC70；SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10μAmaximumICC ?±8mAoutputdriveat5V

1PD

型號：CAHCT1G02QDCKRQ1；Package：SC70；SN74AHCT1G02-Q1 Automotive 2-Input Positive-NOR Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat

1PI

型號：CAHCT1G08QDCKRQ1；Package：SC70；SN74AHCT1G08-Q1 Automotive 2-Input Positive-AND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat

1PI

型號：CAHCT1G08QDCKRQ1；Package：SC70；SN74AHCT1G08-Q1 Automotive 2-Input Positive-AND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10μAmaximumICC ?±8mAoutputdriveat5V

1P8

型號：INA181A1IDCKR；Package：SC70；INAx181 Bidirectional, Low- and High-Side Voltage Output, Current-Sense Amplifiers

1Features ?Common-moderange(VCM):–0.2Vto+26V ?Highbandwidth:350kHz(A1devices) ?Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V ?Outputslewrate:2V/μs ?Bidirectionalcurrent-sensingcapability ?Accuracy: –±1gainerror(maximum) –