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1PB

型號：CAHCT1G00QDCKRQ1；Package：SC70；SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10-μAmaximumICC ?±8-mAoutputdriveat

1PB

型號：CAHCT1G00QDCKRQ1；Package：SC70；SN74AHCT1G00-Q1 Automotive 2-Input Positive-NAND Gates

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?Operatingrangeof4.5Vto5.5V ?Lowpowerconsumption,10μAmaximumICC ?±8mAoutputdriveat5V

1PB

型號：TCR3DM115A；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features UltrasmallpackageDFN4D(1.0mmx1.0mm;t0.37mm(typ.)) Widerangeoutputvoltagelineup(VOUT=1.0to4.5V) Lowdropoutvoltage V DO=175mV(typ.)at3.3Voutput,IOUT=300mA V DO=216mV(typ.)at2.5Voutput,IOUT=300mA V DO=297mV(typ.)at1.8V

1PB

型號：TCR8BM115A；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator

1.Description TheTCR8BMseriesareCMOSsingle-outputvoltageregulatorswithanon/offcontrolinput,featuringultralowdropoutvoltage,highPSRR,lowinrushcurrentandfastloadtransientresponse. Adifferentiatingfeatureistheuseofasecondarybiasrailasareferencevoltagethat