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SPA17N80C3

Marking：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) ?Pb

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA17N80C3

Marking：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

Marking：17N80C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP17N80C3

Marking：17N80C3；Package：TO-220；CoolMOS Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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