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首頁 >12P10G-TMS-T>規(guī)格書列表

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CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQB12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB12P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
UTC
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
UTC/友順
TO-252
22+
6000
十年配單,只做原裝
 詢價(jià)
UTC
17+
TO252
3774
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
UTC/友順
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
UTC
23+
TO-252
7250
原廠原裝正品
 詢價(jià)
UTC/友順
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
UTC/友順
23+
TO-252
50000
原裝正品 支持實(shí)單
 詢價(jià)
UTC
2024+
TO-252
500000
誠信服務(wù),絕對(duì)原裝原盤
 詢價(jià)
UTC/友順
24+
TO-252
60000
詢價(jià)
NK/南科功率
2025+
TO-252-L
986966
國產(chǎn)
 詢價(jià)
更多12P10G-TMS-T供應(yīng)商 更新時(shí)間2025-7-27 13:01:00

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