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CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12P10_08

P-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQB12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

技術(shù)參數(shù)

  • BVDSS(V)：

    -100/

  • Rds(on)mΩ@10V：

    315/

  • ID(A)：

    -9/

  • Qg(nC)@10V(typ)：

    15.6/

  • RθJC(℃/W)：

    2.5

  • Pd(W)：

    50

  • Configuration：

    Single

  • Polarity：

    P

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
25+
TO-251
156713
明嘉萊只做原裝正品現(xiàn)貨
 詢價
CET
12+
TO-251
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
CET
23+
TO-252
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
CET
20+
TO-252
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET/華瑞
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-251
50000
原廠代理 終端免費提供樣品
 詢價
CET
23+
TO-251
6000
原裝正品，支持實單
 詢價
CET/華瑞
24+
NA/
130
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
CET
23+
TO-251
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多CED12P10供應商 更新時間2025-7-28 10:30:00

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