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SVT077R5NDTR

Marking：077R5ND；Package：TO-252-2L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NKL

Marking：077R5NKL；Package：TO-262L-3L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NS

Marking：077R5NS；Package：TO-263-2L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NSTR

Marking：077R5NS；Package：TO-263-2L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NT

Marking：077R5NT；Package：TO-220-3L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT078R0NS

Marking：078R0NS；Package：TO-263-2L；88A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT078R0NT/SisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Thi

SVT078R0NSTR

Marking：078R0NS；Package：TO-263-2L；88A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT078R0NT/SisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Thi

SVT078R0NT

Marking：078R0NT；Package：TO-220-3L；88A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT078R0NT/SisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformance. Thi

TF070N04M

Marking：070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF070N04MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

TL071ACDR

Marking：071AC；Package：SOIC；TL07xx Low-Noise FET-Input Operational Amplifiers

1Features ?Highslewrate:20V/μs(TL07xH,typ) ?Lowoffsetvoltage:1mV(TL07xH,typ) ?Lowoffsetvoltagedrift:2μV/°C ?Lowpowerconsumption:940μA/ch(TL07xH,typ) ?Widecommon-modeanddifferential voltageranges –Common-modeinputvoltagerange includesVCC+ ?Lowinputb