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SVT077R5NS

低壓MOS功率管; ? 95A，68V，RDS(on)（典型值）=6.5mW@VGS=10V\n? 低柵極電荷量\n? 低反向傳輸電容\n? 開關(guān)速度快\n? 提升了dv/dt 能力\n;

SVT077R5NT/D/S? N溝道增強(qiáng)型功率MOS場效應(yīng)晶體管采用士蘭的LVMOS 工藝技術(shù)制造。先進(jìn)的工藝及元胞結(jié)構(gòu)使得該產(chǎn)品具有較低的導(dǎo)通電阻、優(yōu)越的開關(guān)性能及很高的雪崩擊穿耐量。\n\n 該產(chǎn)品可廣泛應(yīng)用于不間斷電源及逆變器系統(tǒng)的電源管理領(lǐng)域。\n\n

SVT077R5NS

絲?。?a target="_blank" title="Marking" href="/077r5ns/marking.html">077R5NS；Package：TO-263-2L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NSTR

絲?。?a target="_blank" title="Marking" href="/077r5ns/marking.html">077R5NS；Package：TO-263-2L；95A, 68V N-CHANNEL MOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT077R5NT

95A,68VN-CHANNELMOSFET

DESCRIPTION TheSVT077R5NT/D/S/KLisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SW-18010PSU

國產(chǎn)(YUSAN)
震動開關(guān),1K/一袋

國產(chǎn)(YUSAN)