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065N06T

型號(hào)：ACMS66N06V8-HF；Package：PDFN3x3-8L；MOSFET

Features -Superlowgatecharge. -ExcellentCdv/dteffectdecline. -Advancedhighcelldensitytrenchtechnology. -Greendeviceavailable. -AEC-Q101Qualified.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

062N04

型號(hào)：ACMS68N04H8-HF；Package：PDFN5x6-8L；MOSFET

Features -FastswitchingMOSFETforSMPS. -Advancedhighcelldensitytechnology. -Verylowon-resistanceRDS(ON). -AEC-Q101Qualified.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

060P03

型號(hào)：ACMS71P03H8-HF；Package：PDFN5x6-8L；MOSFET

Features -Superlowgatecharge. -Advancedhighcelldensitytrenchtechnology. -ExcellentCdv/dteffectdecline. -AEC-Q101Qualified.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

06B3

型號(hào)：BM2P06B3JF-E2；Package：SOP8；Built-in Switching MOSFET PWM-type DC/DC Converter IC

Features ?PWMCurrentModeControl ?FrequencyHoppingFunction ?BurstOperationatLightLoad ?FrequencyReductionFunction ?Built-in730VStartupCircuit ?Built-in730VSwitchingMOSFET ?VCCUVLO(UnderVoltageLockout) ?VCCOVP(OverVoltageProtection) ?SOURCEPinOpenProte

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

060N10NS

型號(hào)：BSC060N10NS3G；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features ?Verylowgatechargeforhighfrequencyapplications ?Optimizedfordc-dcconversion ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Qualifiedac

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

065N03L

型號(hào)：BSZ065N03LS；Package：PG-TSDSON-8；n-Channel Power MOSFET

Features ?Optimizedforhighperformancebuckconverters(Server,VGA) ?100avalanchetested ?Verylowon-resistanceRDS(on)@VGS=4.5V ?ExcellentgatechargexRDS(on)product(FOM) ?VerylowFOMQOSSforhighfrequencySMPS ?VerylowFOMSWforhighfrequencySMPS ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

06IZ

型號(hào)：HIP2106AIRZ；Package：DFN；Low Voltage Driver for Synchronous Rectification

Features ?Adaptiveshoot-throughprotection(HIP2106Aonly) ?HIandLIinputs(HIP2105only) ?0.4ΩON-resistanceand4Asinkcurrentcapability ?Lowtri-statehold-offtime(20ns)(HIP2106Aonly) ?Supports3.3Vand5VHI/LIorPWMinput ?Power-OnReset(POR) ?DualFlatNo-Lead(DFN)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

06IZ

型號(hào)：HIP2106AIRZ-T；Package：DFN；Low Voltage Driver for Synchronous Rectification

Features ?Adaptiveshoot-throughprotection(HIP2106Aonly) ?HIandLIinputs(HIP2105only) ?0.4ΩON-resistanceand4Asinkcurrentcapability ?Lowtri-statehold-offtime(20ns)(HIP2106Aonly) ?Supports3.3Vand5VHI/LIorPWMinput ?Power-OnReset(POR) ?DualFlatNo-Lead(DFN)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

060N06N

型號(hào)：IPA060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

060N06N

型號(hào)：IPA060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    06

  • 功能描述：

    兩極晶體管 - BJT Digital Transistor NPN

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

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長(zhǎng)電
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23794
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CJ/長(zhǎng)電
21+
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23+
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長(zhǎng)晶科技
21+
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50
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22+
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原裝正品
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2015
SOT-23
9000
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24+
N/A
62000
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24+
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只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)
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更多06供應(yīng)商 更新時(shí)間2025-7-29 16:02:00

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