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060

型號：749252060；WE-CST Current Sense Transformer

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

060P03

型號：ACMS71P03H8-HF；Package：PDFN5x6-8L；MOSFET

Features -Superlowgatecharge. -Advancedhighcelldensitytrenchtechnology. -ExcellentCdv/dteffectdecline. -AEC-Q101Qualified.

060N10NS

型號：BSC060N10NS3G；Package：PG-TDSON-8；OptiMOS3 Power-Transistor

Features ?Verylowgatechargeforhighfrequencyapplications ?Optimizedfordc-dcconversion ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Qualifiedac

060N06N

型號：IPA060N06N；Package：PG-TO220-FP；OptiMOSTM Power-Transistor, 60 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

060N06N

型號：IPA060N06N；Package：PG-TO220-FP；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

0604NLS

型號：ISC0604NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

0605NLS

型號：ISC0605NLS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?OptimizedforhighperformanceSMPS,e.g.synchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

060N10N6

型號：ISC060N10NM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

06065TDW

型號：LSC06065TDW；Package：TO-252；SILICON CARBIDE SCHOTTKY DIODE

FEATURES ?Positivetemperaturecoefficientforsafeoperationandeasyof paralleling ?175°Cmaximumoperatingjunctiontemperature ?Essentiallynoreverseorforwardrecovery ?Extremelyfastswitchingnotdependentontemperature ?QualifiedaccordingtoAEC-Q101Rev_D ?Lead-FreeFini

0603NAB

型號：PHPT60603NY-Q；Package：SOT669；60 V, 3 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60603PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin