最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

033

型號(hào)：7448991033；WE-MCRI SMT Molded Coupled Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

033

型號(hào)：TPS61033DRLR；Package：SOT-5X3；TPS61033 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1Features ?Inputvoltagerange:1.8Vto5.5V ?Outputvoltagerange:2.2Vto5.5V –WhenFBconnecttoVINoutputvoltagefixed 5.0V ?Twovalleyswitchingcurrentlimitoptions –TPS61033:5.5-Atypical –TPS610333:1.85-Atypical ?Highefficiencyandpowercapability –Two25-mΩ

033

型號(hào)：TPS61033DRLR；Package：SOT-5X3；TPS61033X 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1Features ?Inputvoltagerange:1.8Vto5.5V ?Outputvoltagerange:2.2Vto5.5V(TPS61033) –FBconnectstoVINoutputvoltageforfixed5.0 V(TPS61033X) ?Twovalleyswitchingcurrentlimitoptions –TPS61033:5.5-Atypical –TPS610333:1.85-Atypical ?Highefficiencyandpowerca

033N08SC

型號(hào)：BSC033N08NS5SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?Optimizedforsynchronousrectificationinserveranddesktop ?100avalanchetested ?Superiorthermalresistance ?N-channel ?175°Crated ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingto

033N03F2

型號(hào)：IPP033N03LF2S；Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

033N04NS

型號(hào)：IPP033N04NF2S；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

033N03F2

型號(hào)：ISC033N03LF2S；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

033N03F

型號(hào)：ISZ033N03LF2S；Package：PG-TSDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforwiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

03360YE

型號(hào)：PSMP033-60YE；Package：SOT669；60 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeMOSFETinanLFPAK56(PowerSO8)Surface-MountedDevice (SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforthermallydemandingenvironmentsdueto175°Cra

033N06NS

型號(hào)：PSMQC033N06NS1；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature ?RDS(ON),VGS@10V,ID@40A