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FAN7024MUX

Marking：024YWW；Package：8MSOP；675mW CMOS Mono Power Amplifier with Shutdown

Description TheFAN7024isabridgeconnectedaudiopoweramplifiercapableofdelivering675mWofcontinuousaveragepowertoan8?loadwithlessthan0.3(THD)froma5Vpowersupply.TheFAN7024requiresfewexternalcomponentsandoperatesonlowsupplyvoltagefrom2.3Vto5.5V.SincetheFA

IPA028N04NM3S

Marking：028N043S；Package：PG-TO220；OptiMOSTM 3 Power-Transistor, 40 V

Features ?Idealforhighfrequencyswitchingandsync.rec. ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPB021N06N3G

Marking：021N06N；Package：PG-TO263-3；OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

IPB022N12NM6

Marking：022N12N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

IPB023N04NF2S

Marking：023N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPB024N08NF2S

Marking：024N08NS；Package：PG-TO263-3；MOSFET StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPB026N10NF2S

Marking：026N10NS；Package：PG-TO263-3；StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPB029N06NF2S

Marking：029N06NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPB029N15NM6

Marking：029N15N6；Package：PG-TO263-3；OptiMOS? 6 Power?Transistor, 150 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21 ?MSL1classifiedaccordingtoJ?STD?020

IPD020N03LF2S

Marking：020N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 PowerTransistor, 30 V

Features ?Optimizedforwiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21