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ZXT10P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES ?LowEquivalentOnRes

Zetex

Zetex Semiconductors

ZXT10P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features ?BVCEO>-12V ?IC=-3AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?RCE(sat)=65m?foraLowEquivalentOn-Resistance ?LowSaturationVoltage(-100mVmax@1A) ?hFECharacterizedupto-10AforHighCurrentGainHold-Up ?TotallyLead-Free&FullyRoHS

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6

PNP, 12V, 3A, SOT26;

This new 4th generation ultra low saturation transistor utilises the Zetex\nmatrix structure combined with advanced assembly techniques to give\nextremely low on state losses. This makes it ideal for high efficiency, low\nvoltage switching applications.

DiodesDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6

12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features ?BVCEO>-12V ?IC=-3AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?RCE(sat)=65m?foraLowEquivalentOn-Resistance ?LowSaturationVoltage(-100mVmax@1A) ?hFECharacterizedupto-10AforHighCurrentGainHold-Up ?TotallyLead-Free&FullyRoHS

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES ?LowEquivalentOnRes

Zetex

Zetex Semiconductors

ZXT10P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplications. FEATURES ?LowEquivalentOnRes

Zetex

Zetex Semiconductors

ZXT10P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features ?BVCEO>-12V ?IC=-3AContinuousCollectorCurrent ?ICM=-10APeakPulseCurrent ?RCE(sat)=65m?foraLowEquivalentOn-Resistance ?LowSaturationVoltage(-100mVmax@1A) ?hFECharacterizedupto-10AforHighCurrentGainHold-Up ?TotallyLead-Free&FullyRoHS

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6_15

12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

ZXT10P12DE6TA

Package：SOT-23-6；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS PNP 12V 3A SOT23-6

PAMDiodes Incorporated

龍鼎微龍鼎微電子（上海）有限公司

技術(shù)參數(shù)

  • Compliance(Only Automotive supports PPAP)：

    Standard

  • Polarity：

    PNP

  • IC (A)：

    3

  • ICM (A)：

    10

  • PD (W)：

    1.1

  • hFE (Min)：

    300

  • hFE (@ IC) (A)：

    0.1

  • hFE(Min 2)：

    180

  • hFE (@ IC2) (A)：

    2.5

  • VCE(sat) Max (mV)：

    17

  • VCE(SAT) (@ IC/IB) (A/mA)：

    0.1/10

  • VCE(sat) (Max.2) (mV)：

    300

  • VCE(sat) (@ IC/IB2) (A/mA)：

    3/50

  • fT (MHz)：

    110

  • RCE(sat) (mΩ)：

    65

  • Packages：

    SOT26

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ZETEX
24+
SOT23-6
3000
詢價(jià)
ZETEX
24+
SOT23-6
4897
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
ZETEX/DIODES
16+
SOT23-6L
33245
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價(jià)
ZETEX
2016+
SOT23-6
18053
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
ZETEX
25+
SOT23-6
6000
福安甌為您提供真芯庫存,真誠(chéng)服務(wù)
 詢價(jià)
ZETEX
24+
SOT-23-6
4820
只做原裝正品
 詢價(jià)
ZETEX
23+
SOT23-6
24000
原裝正品,假一罰十
 詢價(jià)
ZETEX
24+
SOT23-6
5989
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
 詢價(jià)
DIODES/ZETEX
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價(jià)
DIODES
23+
SOT23-6
63000
原裝正品現(xiàn)貨
 詢價(jià)
更多ZXT10P12DE6供應(yīng)商 更新時(shí)間2025-7-30 16:01:00

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