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ZXGD3003E6Q

40V 5A GATE DRIVER IN SOT26

Features High-GainBufferwithTypically1.5AOutputfrom10mAInput 5AmpsPeakOutputCurrent 40VSupplyfor+20Vto-18VGateDrivingtoPreventdV/dt InducedFalseTriggeringandMinimizeOn-Losses Emitter-FollowerthatisRuggedtoLatch-Up/Shoot-Though FastSwitchingEmitter-FollowerC

ZXGD3003E6Q

40V 5A GATE DRIVER IN SOT26; ?High-Gain Buffer with Typically 1.5A Output from 10mA Input\n?5 Amps Peak Output Current\n?40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering and Minimize On-Losses\n?Emitter-Follower that is Rugged to Latch-Up/Shoot-Though\n?Fast Switching Emitter-Follower configuration:\n?2ns propagation delay time\n?9ns rise/fall time, 1000pF load\n?Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances\n?Near-Zero Quiescent Supply Current\n;

This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1.5A into the low gate impedance with just 10mA input from a controller. The turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. By defining the switching characteristics appropriately, EMI and cross conduction can be reduced.

ZXGD3003E6QTA

絲?。?a target="_blank" title="Marking" href="/3003/marking.html">3003；Package：SOT26；40V 5A GATE DRIVER IN SOT26

Features High-GainBufferwithTypically1.5AOutputfrom10mAInput 5AmpsPeakOutputCurrent 40VSupplyfor+20Vto-18VGateDrivingtoPreventdV/dt InducedFalseTriggeringandMinimizeOn-Losses Emitter-FollowerthatisRuggedtoLatch-Up/Shoot-Though FastSwitchingEmitter-FollowerC

ZXGD3003E6QTA

Package：SOT-23-6；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRVR LOW-SIDE SOT23-6

ZXGD3003E6TA

5A(peak)gatedriver

ZXGD3003E6TA

5A(peak)gatedriverinSOT23-6