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ADG779

CMOS1.8Vto5.5V,2.5ohmSPDTSwitch/2:1MuxInTinySC70Package

GENERALDESCRIPTION TheADG779isamonolithicCMOSSPDT(single-pole,double-throw)switch.Thisswitchisdesignedonasubmicronprocessthatprovideslowpowerdissipationyetgiveshighswitchingspeed,lowonresistance,andlowleakagecurrents. FEATURES 1.8Vto5.5Vsinglesup

ADG779

SPDTSwitch/2:1MuxinTinySC70Package

ADG779BKS

CMOS1.8Vto5.5V,2.5ohmSPDTSwitch/2:1MuxInTinySC70Package

GENERALDESCRIPTION TheADG779isamonolithicCMOSSPDT(single-pole,double-throw)switch.Thisswitchisdesignedonasubmicronprocessthatprovideslowpowerdissipationyetgiveshighswitchingspeed,lowonresistance,andlowleakagecurrents. FEATURES 1.8Vto5.5Vsinglesup

ADG779BKS-REEL

CMOS1.8Vto5.5V,2.5廓SPDTSwitch/2:1MuxinTinySC70Package

BA779

SiliconPINDiodes

Features ?Widefrequencyrange10MHzto1GHz ?Lead(Pb)-freecomponent ?Componentinaccordanceto ??RoHS2002/95/ECandWEEE2002/96/EC ?? Applications ?CurrentcontrolledHFresistanceinadjustableattenuators

BA779

RFPINDiodes-SingleinSOT23

BA779

SiliconPINDiodes

Features ●Widefrequencyrange10MHzto1GHz

BA779

Current-controlledRFresistorforswitchingandattenuatingapplications

BA779-G

Widefrequencyrange10MHzto1GHz

BA779-G

RFPINDiodes

FEATURES ?Widefrequencyrange10MHzto1GHz ?AEC-Q101qualified ?BaseP/N-HG3-green,automotivegrade ?Materialcategorization: Fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?CurrentcontrolledHFresistanceinadjustable attenuators MECHANI